产品技术
专注功率半导体器件的研发设计制造及提供完整的解决方案
JSAB IGBT 通过采用独特的耐压结构设计，确保产品可靠性达到国际一流水平。JSAB 650V 及 1200V IGBT 芯片均已通过业内最高标准的 175℃, 1000小时高温反偏 (HTRB、HTGB) 老化加速可靠性测试 。
JSAB 650V IGBT 芯片可靠性测试
| Test Item | Stress Condition | Duration | Sample Size | Failure |
| HTRB | Vce= 480V, Vge= 0V, Tc = 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| HTGB | Vge= 20V, Vce= 0V, Tc= 175°C | 168hrs | 77 | 0 |
| 500hrs | 77 | 0 | ||
| 1000hrs | 77 | 0 | ||
| AC | 121°C, 29.7 psia,100% RH | 96hrs | 77 | 0 |
| 168hrs | 77 | 0 | ||
| TC | -65/150°C,15 mins Dwell Time | 100cyc | 77 | 0 |
| 500cyc | 77 | 0 | ||
| 1000cyc | 77 | 0 | ||
| HTSL | Ta = 150°C | 168hrs | 77 | 0 |
