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  • TO-247(SJ-MOS)
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  • SGT-MOS
  • SJ-MOS

SJ-MOS

  • 低导通电阻

  • 高开关速度

  • 高可靠性

  • 低开关损耗

安建科技现已开发出600V~650V耐压等级超级结(Super-junction , SJ) MOSFET ,由安建科技自主研发设计并掌握相关知识产权,采用深沟槽工艺,为国内目前元胞尺寸最小的SJ-MOS产品之一。

安建科技的SJ-MOS产品采用独特的终端设计,在有效减小芯片面积的同时实现了器件的高可靠性。

基于SJ-MOS的技术特点,其主要应用于PD充电、LED电源、服务器电源,电动汽车充电桩等。

ProductPackagePolarityVDSIDVGSVGS(th)RDS(on)@ 10VDatasheet
Min.Max.Typ.Max.
VAVVV
筛选筛选筛选筛选筛选筛选筛选筛选筛选筛选重置筛选
JMH60R080STO-247N60042±302.54.56580
JMH60R080FTO-247N60042±202.54.56580
JMP60R160STO-220N60022±302.54.5125160
JMG60R160STO-220MFN60011±302.54.5125160
JMG60R160FTO-220MFN60011±202.54.5125160
JMG60R320STO-220MFN60011±302.54.5270320
JMD60R320STO-252N60012±302.54.5270320
JMN60R320SDFN 8x8N60011±302.54.5270320
JCD60R380STO-252N60011±302.54.5318380
JCF60R380STO-220FN6009.6±302.54.5318380
JMH65R100STO-247N65035±302.54.580100
JMP65R100FTO-220N65025±202.54.580100
JMH65R100FTO-247N65035±202.54.580100
JMP65R190STO-220N65020±302.54.5150190
JMG65R190STO-220MFN65010±302.54.5150190
JMG65R380STO-220MFN6509±302.54.5320380
JMD65R380STO-252N65010±302.54.5320380
JMN65R380SDFN 8x8N6509.6±302.54.5320380
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SGT-MOS
SiC-Diode
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