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专注功率半导体器件的研发设计销售
安建科技推出的IGBT采用先进的沟槽-场截止型(Trench-FS)结构，由安建科技自主研发并掌握相关知识产权。
采用”Taiko”薄片晶圆加工技术，创新的精细沟槽结构，降低芯片导通及开关能量损耗，通过改进芯片元胞设计，保证IGBT器件的耐用性以及高的短路电流能力，独特的耐压结构设计，保证器件的高可靠性。
安建已量产 1200V-25A EasyPIM™ 1B IGBT 模块及 1200V-50A EasyPIM™ 2B IGBT 模块，能够与国外最先进的第七代IGBT模块实现Pin-to-Pin替代。
| Product | Compatible Housing | BVCES | IC | VGE(th) | Vcesat | Dimensions | Configuration | Datasheet | ||
| Min. | Max. | Typ. | Max. | |||||||
| V | A | V | V | V | V | |||||
| 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 筛选 | 重置筛选 |
| JG1A30P60EG2 | EasyPIM™ 1B | 600 | 30 | 5 | 7 | 1.6 | 1.9 | 33.8×48×12mm | PIM | |
| JG1A25P120FG2 | EasyPIM™ 1B | 1200 | 25 | 5.5 | 7.5 | 1.85 | 2.2 | 33.8×48×12mm | PIM | |
| JG1D25P120FG2 | EconoPIM™ 2 | 1200 | 25 | 5.5 | 7.5 | 1.85 | 2.2 | 107×45×17mm | PIM | |
| JG3D25P120FG2 | EconoPIM™ 2 | 1200 | 25 | 5.5 | 7.5 | 1.85 | 2.2 | 107×45×17mm | PIM | |
| JG1B35P120FG2 | EasyPIM™ 2B | 1200 | 35 | 5.5 | 7.5 | 1.65 | 2 | 48×57×12mm | PIM | |
| JG1D35P120FG2 | EconoPIM™ 2 | 1200 | 35 | 5.5 | 7.5 | 1.65 | 2 | 107×45×17mm | PIM | |
| JG3D40P120FG2 | EconoPIM™ 2 | 1200 | 40 | 5.5 | 7.5 | 1.75 | 2.1 | 107×45×17mm | PIM | |
| JG1B50P120FG2 | EasyPIM™ 2B | 1200 | 50 | 5.5 | 7.5 | 1.7 | 2 | 48×57×12mm | PIM | |
| JG1D50P120FG2 | EconoPIM™ 2 | 1200 | 50 | 5.5 | 7.5 | 1.7 | 2 | 107×45×17mm | PIM | |
| JG2D75P120FG | EconoPIM™ 2 | 1200 | 75 | 5.5 | 7.5 | 1.65 | 2 | 107×45×17mm | PIM | |
| JG1E75P120FG | EconoPIM™ 3 | 1200 | 75 | 5.5 | 7.5 | 1.65 | 2 | 122×62×17mm | PIM | |
| JG1E100P120FG | EconoPIM™ 3 | 1200 | 100 | 5.5 | 7.5 | 1.65 | 2 | 122×62×17mm | PIM | |
| JG1F100F120FG | 34 mm | 1200 | 100 | 5.5 | 7.5 | 1.65 | 2 | 34x94x30.5mm | Dual | |
| JG1F100F120FG3 | 34 mm | 1200 | 100 | 5.5 | 7.5 | 1.65 | 2 | 34x94x30.5mm | Dual | |
| JG1F150F120FG3 | 34 mm | 1200 | 150 | 5.5 | 7.5 | 2 | 2.4 | 34x94x30.5mm | Dual | |
| JG1G200F120FG | 62 mm | 1200 | 200 | 5.5 | 7.5 | 1.65 | 2 | 62x106x30.5mm | Dual | |
备注：EasyPIM™1B、EasyPIM™ 2B、EconoPIM™ 2、EconoPIM™ 3均为英飞凌公司注册的商标。
