产品中心 IGBT单管
  • IGBT单管
  • TO-3PN(IGBT单管)
  • O-247(IGBT单管)
  • TO-264(IGBT单管)
  • IGBT单管
  • IGBT单管
  • TO-3PN(IGBT单管)
  • O-247(IGBT单管)
  • TO-264(IGBT单管)
  • IGBT单管

IGBT单管

  • 低饱和导通压降

  • 低开关损耗

  • 高可靠性

  • 高短路耐量

  • 高参数一致性

安建科技推出的IGBT采用先进的沟槽-场截止型(Trench-FS)结构,由安建科技自主研发并掌握相关知识产权。

采用”Taiko”薄片晶圆加工技术,创新的精细沟槽结构,降低芯片导通及开关能量损耗,完美适配工业变频、伺服驱动、工业电源等各类应用,安建科技IGBT通过改进芯片元胞设计,保证器件的耐用性以及高的短路电流能力;独特的耐压结构设计,保证器件的高可靠性。

安建科技IGBT芯片均已通过业内最高标准的175℃, 1000小时高温反偏 (HTRB、HTGB) 老化加速可靠性测试。

ProductPackageBVCESICVGE(th)VCEsatDatasheet
Min.Max.Typ.Max.
VAVVVV
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JHB10N60EETO-263600105.27.21.451.8
JHG10N60EETO-220MF600105.27.21.451.8
JHP10N60EETO-220600105.27.21.451.8
JHB15N60EE2TO-263600155.27.21.72
JHG15N60EE2TO-220MF600155.27.21.72
JHP15N60EE2TO-220600155.27.21.72
JHB15N60FETO-26360015571.51.9
JHF15N60FETO-220F60015571.51.9
JHG15N60FETO-220MF60015571.51.9
JHP15N60FETO-22060015571.51.9
JHB20N60FE2TO-26360020571.72
JHG20N60FE2TO-220MF60020571.72
JHP20N60FE2TO-22060020571.72
JHB25N60EETO-26360025571.51.8
JHG25N60EETO-220MF60025571.51.8
JHH25N60EETO-24760025571.51.8
JHP25N60EETO-22060025571.51.8
JHB30N60EE2TO-26360030571.61.9
JHG30N60EE2TO-220MF60030571.61.9
JHH30N60EE2TO-24760030571.61.9
JHP30N60EE2TO-22060030571.61.9
JHH40N60HETO-24760040461.62.05
JIA40N65RHTO-3PN65040461.551.95
JHH75N60HETO-24760075461.551.9
JHH15N120FATO-2471200155.57.51.52
JHH25N120FATO-2471200255.57.51.52
JHH25N120FA2TO-2471200255.57.51.852.2
JHH40N120FATO-2471200405.57.51.52
JHH40N120FA2TO-2471200405.57.51.752.1
JHH40N120HATO-2471200404.26.21.72.05
JHH50N120FA2TO-2471200505.57.51.72
JHH50N120HATO-2471200504.56.51.551.9
JHH75N120HATO-2471200755.57.51.752.1
JHK75N120FATO-2641200755.57.51.652
JHK100N120FATO-26412001005.57.51.652
JHK100N120HATO-26412001005.57.51.92.3
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IGBT模块
SGT-MOS
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